首页> 外文会议>2017 International Conference on Circuits, Devices and Systems >Improved trade-off characteristics of 3.3kV fast recovery diode with optimized carrier distribution used for power systems
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Improved trade-off characteristics of 3.3kV fast recovery diode with optimized carrier distribution used for power systems

机译:具有优化的载流子分布的3.3kV快速恢复二极管的折衷特性得到改善,用于电力系统

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摘要

This paper presents an innovative method to optimize the excess carrier distribution in 3.3kV fast recovery diodes (FRDs). The idea is to develop a structure that can effectively optimize the anode emission efficiency. Based on TCAD simulation, two new structures, namely, local emitter control (LEC) diode, local emitter control and local lifetime control (LELC) diode, have been developed with improved trade-off characteristics between reverse recovery current peak and forward voltage drop compared with conventional diodes. The LEC diodes demonstrate the improved trade-off characteristics through introducing a wavy-type P-body that produces a low minority carrier density at P-body/N-sub side and a high minority carrier density at N-sub/N+ side. Through introducing an addition local lifetime control layer in combination with a wavy-type p-body, the LELC diode has demonstrated the best balanced properties of the forward voltage drop(VF), the reverse recovery current peak(Irr), and the softness without at the expense of increasing leakage current. The forward voltage drop of LEC diode and LELC diode are respectively decreased by 23% and 35% compared with conventional diodes. The surge current of LELC diode is 2 times larger than that of conventional and LEC ones.
机译:本文提出了一种创新的方法,可以优化3.3kV快速恢复二极管(FRD)中的多余载流子分布。想法是开发一种可以有效地优化阳极发射效率的结构。在TCAD仿真的基础上,开发了两种新结构,即本地发射极控制(LEC)二极管,本地发射极控制和本地寿命控制(LELC)二极管,并改善了反向恢复电流峰值与正向压降之间的权衡特性与常规二极管。 LEC二极管通过引入在P体/ N-sub侧产生较低的少数载流子密度并在N-sub / N +侧产生较高的少数载流子密度的波浪形P体,展示了改进的折衷特性。通过引入附加的局部寿命控制层与波浪型p体相结合,LELC二极管表现出了正向压降(V F ),反向恢复电流峰值的最佳平衡特性(I rr )和柔软性,而不会增加泄漏电流。与传统二极管相比,LEC二极管和LELC二极管的正向压降分别降低了23%和35%。 LELC二极管的浪涌电流是传统和LEC二极管的浪涌电流的2倍。

著录项

  • 来源
  • 会议地点 Chengdu(CN)
  • 作者单位

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

    Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Leakage currents; Surges; Junctions; P-i-n diodes; Charge carrier density; Anodes;

    机译:漏电流;电涌;结; P-i-n二极管;电荷载流子密度;阳极;;

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