Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Department of Power Semiconductor, Global Energy Interconnection Research Institute, Beijing, China;
Leakage currents; Surges; Junctions; P-i-n diodes; Charge carrier density; Anodes;
机译:具有自调节p发射器效率的快速功率二极管的改进的恢复
机译:具有改善的二极管反向恢复特性的集成500V功率DMOSFET /反并联整流器器件
机译:具有改善的反向恢复特性的单片集成功率MOSFET和肖特基二极管
机译:改进了3.3kV快速恢复二极管的折磨特性,具有用于电力系统的优化载体分布
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:具有超越1D限制的RSP-BV折衷和卓越的反向恢复特性的新型功率MOSFET
机译:低电流密度下快速恢复的高功率双极二极管中过剩载流子浓度控制的分析
机译:宽带大功率快速开关速度微波开关的针脚二极管权衡研究。