Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Silicon carbide; Crystals; Face; Surface morphology; Surface topography; Morphology; Graphite;
机译:SiC溶液生长过程中生长表面宏观台阶碰撞引起的基面位错形成
机译:通过溶液生长方法制造的4H-SiC晶片在外延层中基底平面位错行为的评价
机译:4H-SiC衬底上具有邻角倾斜的外延层生长过程中基面位错向螺纹边缘位错的转换
机译:在SiC溶液生长期间,通过癌症对生长表面碰撞引入的基底平面脱位
机译:用于稳定双极二极管的4H-碳化硅的低基面位错密度外延层的生长。
机译:4H-SiC 100 mm PVT生长过程中基面位错密度和热机械应力分析
机译:基底平面位错密度和热机械应力在100 mm PVT生长期间的4H-SIC期间