Kwansei Gakuin University, School of Science and Technology, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan;
Kwansei Gakuin University, School of Science and Technology, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan;
Kwansei Gakuin University, School of Science and Technology, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan;
Kwansei Gakuin University, School of Science and Technology, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan;
Kwansei Gakuin University, School of Science and Technology, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan;
Nippon Steel Sumitomo Metal Corporation, Advanced Technology Research Laboratories, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan;
Nippon Steel Sumitomo Metal Corporation, Advanced Technology Research Laboratories, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan;
Nippon Steel Sumitomo Metal Corporation, Advanced Technology Research Laboratories, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan;
Nippon Steel Sumitomo Metal Corporation, Advanced Technology Research Laboratories, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan;
Surface morphology; Epitaxial layers; Silicon carbide; Scanning electron microscopy; Substrates;
机译:4H-SiC外延层上台阶形结构的SEM和ECC成像研究
机译:升华“夹心法”生长的4H-SiC异质外延层的彩色阴极发光SEM(CCL-SEM)研究
机译:4H-SiC上生长的外延层的控制:从3C微晶夹杂物到Ⅱ型量子阱结构
机译:SEM和ECC成像研究在4H-SIC外延层上的阶梯结构
机译:外延II-VI半导体系统中单层结构和界面的光学研究。
机译:多层望远镜的层析成像及其在火山地下结构研究中的应用
机译:C端接4H-siC(000)表面结构在生长中的作用 石墨烯层 - 透射电子显微镜和密度泛函 理论研究