CVD growth of graphene on SiC (0001): Influence of substrate offcut

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. In this study we report the growth of graphene on different silicon carbide substrates by chemical vapor deposition (CVD) in order to understand the influence of the substrate offcut on the graphene layers. For this purpose, graphene was grown on substrates with different offcuts, under hydrogen-argon atmosphere, and analyzed using AFM, LEED and Raman spectroscopy. We discuss the morphology and strain in graphene, and finally the ideal offcut for graphene growth.