Band power comparative study of normal, poor dyslexic and capable dyslexic children in writing

摘要

Learning disorder that causes a child to have difficulty in reading and writing can be attributed to a neurological defect called dyslexia. A normal learner uses the brain's left hemisphere to acquire learning skills, where studies have indicated to be ineffective in dyslexic. It is believed that a capable dyslexic compensate on the inefficiencies of the left brain by activating areas of the right. Dyslexic who continues to force left brain activation remains to be poor in reading and writing. This paper looks into the comparative study of electroencephalogram (EEG) band power features during writing of an alphabet for normal, poor dyslexic and capable dyslexic children. Eight electrode positions were identified through localization of areas related to learning pathway studies. Results provide verification on the role of the left hemisphere in writing activities of a normal child, where a higher band power features were observed. A poor dyslexic struggles to properly write with a similar activation of the left hemisphere, while a capable dyslexic band power features indicated right hemisphere activities. Activation of dyslexics' right hemisphere is required to overcome their learning difficulties.