Growth and crystalline properties of Ge1#x2212;x#x2212;ySnxCy ternary alloy thin films on Ge(001) substrate

摘要

We achieved the world's first epitaxial growth of a Ge1−x−ySnxCy layer, and investigated the effect of Sn incorporation on the growth of Ge1−xCx. Sn incorporation can decrease the epitaxial temperature of Ge1−xCx layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge1−x−ySnxCy layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.