首页> 外文期刊>Journal of Applied Physics >Electrical properties of K0.5Na0.5NbO3 thin films grown on Nb:SrTiO3 single-crystalline substrates with different crystallographic orientations
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Electrical properties of K0.5Na0.5NbO3 thin films grown on Nb:SrTiO3 single-crystalline substrates with different crystallographic orientations

机译:Nb:SrTiO 3 单晶衬底上生长的K 0.5 Na 0.5 NbO 3 薄膜的电性能不同的晶体学取向

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摘要

To attain a deep understanding of ferroelectric and piezoelectric characteristics of K0.5Na0.5NbO3 as a promising lead-free compound, the ferroelectric and piezoelectric responses of its epitaxially grown films with three primary orientations of [001], [110], and [111] were investigated with an emphasis on the influence of crystallographic orientation. The films were prepared by sol-gel processing using Nb-doped SrTiO3 single-crystalline substrates with various cutting directions. A peak remnant polarization value (Pr) of 17.3 μC/cm2 was obtained along the [110] direction due to the coincidence between the spontaneous polarization and the film orientation, which is significantly higher than 10.5 μC/cm2 in [111]-oriented and 10.1 μC/cm2 in [001]-oriented ones. However, a better piezoelectric response was achieved in the [001]-oriented films with an average local effective piezoelectric coefficient (d33) of 50.5 pm/V, as compared with 45.1 pm/V and 39.7 pm/V in [110]- and [111]-oriented films, respectively.
机译:为了深入了解作为有前途的无铅化合物K 0.5 Na 0.5 NbO 3 的铁电和压电特性,铁电和压电研究了其外延生长的具有三个主要方向[001],[110]和[111]的薄膜的响应,重点是晶体学取向的影响。薄膜采用Nb掺杂的SrTiO 3 单晶衬底通过溶胶-凝胶工艺制备,具有不同的切割方向。由于自发极化和薄膜取向的重合,沿[110]方向获得的残余极化峰峰值(P r )为17.3 C / cm 2 。显着高于[111]取向的10.5μC/ cm 2 和[001]取向的10.1μC/ cm 2 。但是,在[001]取向薄膜中,平均局部有效压电系数(d 33 )为50.5µpm / V,而45.1µpm / V和39.7µpm时,压电响应更好。 / V分别位于[110]-和[111]-取向的薄膜中。

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