Electrical characterization of pGeSnGe diodes

摘要

I–V characteristics of pGeSnGe diodes have been measured and show very interesting properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the predominant influence of parameters such as the band gap energy of the GeSn layer. C-V characteristics showing little frequency dependence have also been measured, and their analysis for the determination of the carrier concentration is confirmed by simulations. More investigations of the effect of temperature, of other observed features in the C-V characteristics and of other defects at the interface or in the bulk of either layers, are still required in order to explain some of the observed behaviors, notably the reverse saturation current.