Growth temperature effects on graded InxAl1−xAs/GaAs buffer for metamorphic In0.70Ga0.30As/In0.53Al0.47As planar transistor on Ge-on-insulator(GeOI) substrate

摘要

In conclusion, a study on the effect of growth temperature on the InAlAs graded buffer was conducted using a combination of AFM, SIMS, and TEM, leading to an optimum growth temperature of the graded buffer at 420 °C. The optimized MBE growth conditions for InAlAs graded buffer were then applied to planar transistor structure grown on GeOI substrates.