Crystal growth of Sn-related group-IV alloy thin films for advanced Si nanoelectronics

机译：用于高级Si纳米电子学的Sn相关的IV族合金薄膜的晶体生长

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The incorporation of Sn into Ge and Si1−xGex effectively improves on the crystalline and electronic properties. Also, Sn-related group-IV materials give us new features of energy band engineering. The development of crystal growth of Sn-related alloys is essential for extending applications of future Si nanoelectronics.

机译：将Sn掺入Ge和Si1-xGex可有效改善晶体和电子性能。此外，锡相关的第IV组材料为我们提供了能带工程学的新功能。 Sn相关合金晶体生长的发展对于扩展未来Si纳米电子学的应用至关重要。

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《2014 7th International Silicon‐Germanium Technology and Device Meeting》|2014年|155-156|共2页
会议地点 Singapore(SG)
作者
Zaima Shigeaki; Nakatsuka Osamu; Taoka Noriyuki; Kurosawa Masashi; Asano Takanori; Yamaha Takashi; Takeuchi Wakana;
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Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, 464-8603, Japan;

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6. Nanoscale resonators fabricated from metallic alloys, and modeling and simulation of polycrystalline thin film growth. [D] . Ophus, Colin. 2010

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Crystal growth of Sn-related group-IV alloy thin films for advanced Si nanoelectronics

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