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Reliability challenges of Cu wire deployment in flash memory packaging

机译:闪存封装中铜线部署的可靠性挑战

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Cu wirebonding become a great interest of industry in recent years due to its cost effectiveness and electrical and mechanical properties. However, several Cu wire bond reliability challenges are the key concerns in Cu wire deployment in semiconductor packaging. These include Cu wire oxidation and CuAl interface corrosion post HAST or UHAST reliability test. Bond reliability at a Cu wire bond under a humid environment is a major concern in replacing Au wires. Conventional bare Cu bonding wires, in general, are more susceptible to moisture corrosion compared to Au wire. This paper discusses the key reliability challenges Cu wire used in flash fineline BGA package. Cu wire IMD cracking induced by excessive ultrasonic bonding force, Cu wire oxidation due to long staging and Cu ball bond corrosion are discussed in this paper. Failure mechanisms and proposals for reliability improvement have been proposed and discussed in this paper.
机译:近年来,由于铜线键合的成本效益以及电和机械性能,铜线键合成为工业界的极大兴趣。但是,铜线键合可靠性方面的一些挑战是半导体封装中铜线部署的关键问题。这些包括HAST或UHAST可靠性测试后的铜线氧化和CuAl界面腐蚀。在潮湿的环境中,铜线键合的键合可靠性是替换金线的主要问题。一般而言,与金丝相比,常规的裸铜键合丝更容易受到湿气腐蚀。本文讨论了在快闪细线BGA封装中使用的铜线面临的关键可靠性挑战。本文讨论了由于超声波键合力过大引起的铜丝IMD开裂,长期变形导致的铜丝氧化以及铜球键腐蚀。本文提出并讨论了用于提高可靠性的失效机制和建议。

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