Similarities between μc-Si TFT with very thin active layer and FD-SOI FETs

摘要

The subthreshold slope of microcrystalline silicon Thin Fihn Transistor is shown to be highly improved when the thickness of the active layer is enough decreased. In the same manner, the threshold voltage of these TFTs with very thin active layer is shown to be controlled dynamically with high efficiency by a second gate in front of the first one. These behaviours are explained considering the similarities between these TFTs and fully depleted SOI-MOSFETs as well as with dual-gate SOI-MOSFETS.