Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
Research Institute for Nano-devices, Kochi University of Technology,Kami, Kochi 782-8502, Japan;
ZnO; photoluminescence; water vapor annealing; nano-structure;
机译:ZnO层和退火温度对射频磁控溅射制备的SiGe薄膜的结构,光学和膜-基底粘结性能的影响
机译:热退火对射频磁控溅射沉积Al掺杂ZnO薄膜结构,电学和力学性能的影响
机译:衬底对射频磁控溅射制备的掺铝ZnO薄膜结构,电学和光学性质的影响
机译:高压水蒸气退火对射频磁控溅射制备纳米结构ZnO / ZnMGO多层的光致发光和结构性能的影响
机译:通过高压化学气相沉积和ZGP单晶的高压化学气相沉积和振动研究生长的氮化铟外膜的光学和结构性
机译:不同生长角度的射频磁控溅射ZnO薄膜的结构和光学性质
机译:在不同沉积温度下RF-磁控溅射制备的ZnO纳米结构的结构,光学和UV光响应性的退火效应