The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor for Thin-film Transistor

摘要

Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor. The average growth rate of tin oxide film is about 1.2-1.4 A/cycle from 50℃ to 150℃. ALD-grown tin oxide thin film was characterized with the use of XRD, AFM and XPS. Thermal annealing and seed layer affect the surface roughness and the tin amount in the film composition.