Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack

摘要

A method of manufacturing a layer stack adapted for a thin-film solar cell and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer of a first p-i-n junction configured for the solar cell, depositing a first intrinsic-type layer of a first p-i-n junction configured for the solar cell and depositing a further conductive-layer with a conductivity opposite to the first conductive-type layer of the first p-i-n junction configured for the solar cell. The method further includes providing for a SiOx-containing intermediate layer by chemical vapor deposition and depositing a second p-i-n junction configured for the solar cell, wherein the SiOx-containing intermediate layer is provided within the a further conductive-type layer, and wherein the SiOx-containing layer has a thickness of 17 nm or less.