METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL SUBSTRATE, AND SILICON SINGLE CYRYSTAL SUBSTRATE

摘要

The present invention provides a method for manufacturing a silicon single crystal substrate having a carbon diffusion layer on a surface, the method comprising: a step for adhering carbon to the surface of the silicon single crystal substrate by subjecting the silicon single crystal substrate to an RTA treatment in a carbon-containing gas atmosphere; a step for reacting the carbon and the silicon single crystal substrate to form a 3C-SiC single crystal film on the surface of the silicon single crystal substrate; a step for subjecting the silicon single crystal substrate, on which the 3C-SiC single crystal film was formed, to an RTA treatment in an oxidizing atmosphere to thereby oxidize the 3C-SiC single crystal film and form an oxidized film, and inwardly diffuse the carbon into the silicon single crystal substrate; and a step for removing the oxidized film. Through this, a silicon single crystal substrate which has a proximity gettering capacity and a high level of strength in the vicinity of the surface, and for which translocation does not easily occur or extend, as well as a method for manufacturing the same, are provided.