首页> 外国专利> Light Emitting Device having Tunnel Junction and Method of Manufacturing the Same Multi Color Device using Light Emitting Device having Tunnel Junction and Method of Manufacturing the Same

Light Emitting Device having Tunnel Junction and Method of Manufacturing the Same Multi Color Device using Light Emitting Device having Tunnel Junction and Method of Manufacturing the Same

机译:具有隧道结的发光器件和使用具有隧道结的发光器件和制造方法的发光器件制造相同的多色装置的方法

摘要

The disclosed light emitting device having a tunnel junction includes: an n-type semiconductor lower electrode layer; a tunnel junction element formed on the lower electrode layer and having a high doping concentration p-type semiconductor disposed on the high doping concentration n-type semiconductor; a light emitting device layer formed on an upper side of the tunnel junction device and having an n-type semiconductor disposed thereon; and an upper electrode layer formed on an upper side of the light emitting device layer and which is an n-type semiconductor.
机译:所公开的发光装置,具有隧道结包括:n型半导体下电极层; 形成在下电极层上的隧道结元件,并且具有设置在高掺杂浓度n型半导体上的高掺杂浓度p型半导体; 形成在隧道结装置的上侧并具有设置在其上的n型半导体上的发光器件层; 并且形成在发光器件层的上侧上的上电极层,并且是n型半导体。

著录项

  • 公开/公告号KR102337983B1

    专利类型

  • 公开/公告日2021-12-10

    原文格式PDF

  • 申请/专利权人 한국광기술원;

    申请/专利号KR20190153766

  • 申请日2019-11-26

  • 分类号H01L33/24;H01L27/15;H01L33;H01L33/38;

  • 国家 KR

  • 入库时间 2022-08-24 22:45:58

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