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International Symposium on the Physical and Failure Analysis of Integrated Circuits

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1.2.5D/3D device package level defect localization with the use of multiple curve tracings and repeated thermal emission analyses

机译：2.5D / 3D设备封装级缺陷定位，使用多个曲线跟踪和重复的热辐射分析
- 作者：Lee Lan Yin;Chua Kok Keng;Tan Grace
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
2.3D-IC FPGA: KGD, DFT and build-in FA capabilities

机译：3D-IC FPGA：KGD，DFT和内置FA功能
- 作者：Xin Wu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
3.A high tensile stress spacer by low temperature microwave anneal induced 50 mobility enhancement for nano scale FinFETs device

机译：纳米微波FinFET器件通过低温微波退火产生的高拉伸应力隔离层可将迁移率提高50％
- 作者：Yi-Ju Chen;Yao-Ming Huang;Yun-Fang Hou;Min-Cheng Chen;Yao-Jen Lee;Wen-Fa Wu;Jia-Ming Shieh
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
4.A comparison study on the Al-based interfacial layers for Ge MIS devices

机译：Ge MIS器件的铝基界面层的比较研究
- 作者：Yi-Gin Yang;Bing-Yue Tsui
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
5.Analysis of electromigration void nucleation failure time in open copper TSVs

机译：开放式铜TSV中电迁移空隙成核失效时间的分析
- 作者：Rovitto Marco;Zisser Wolfhard H.;Ceric Hajdin
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
6.Decapsulation of 3D multi-die stacked package

机译：3D多管芯堆叠封装的解封装
- 作者：Kor H.B.;Liu Q.;Siah Y.W.;Gan C.L.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
7.A new localized ink coating methodology for preventing photoresist deformation for TEM sample preparation

机译：一种防止TEM样品制备中的光刻胶变形的新型局部油墨涂布方法
- 作者：Seah S.S.;Tee I.;Liu B.H.;Er E.;Zhao S.P.;Lam J.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- E-beam deformation;
- FIB;
- Low-dose;
- Photo-resist;
- TEM;
- failure analysis;
8.A novel approach to deprocess highly sensitive multi-layered IC device using polyimide protective films without damaging active circuitry

机译：一种使用聚酰亚胺保护膜对高灵敏度多层IC器件进行处理的新型方法，而不会损坏有源电路
- 作者：Yusof Nik Mohd Tajuddin;Wei Yuan Wong;Ramuhzan Fadhilah Nurani
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
9.A sample preparation methodology to reduce sample edge unevenness and improve efficiency in delayering the 20-nm node IC chips

机译：一种样品制备方法，可减少样品边缘不均匀并提高延迟20nm节点IC芯片的效率
- 作者：Feng H.;Tan P.K.;Yap H.H.;Low G.R.;He R.;Zhao Y.Z.;Liu B.;Dawood M.K.;Zhu J.;Huang Y.M.;Wang D.D.;Tan H.;Lam J.;Mai Z.H.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
10.A study of fin width effect on the performance of FinFET

机译：鳍宽度对FinFET性能的影响研究
- 作者：Kai-Lin Lee;Ren-Yu He;Hung-Wen Huang;Chih-Chieh Yeh;Iue-Hen Li;Cheng Osbert
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
11.A study of the Au-Al bonding lifetime for MOSFET devices

机译：MOSFET器件的Au-Al键合寿命研究
- 作者：Lulu Wang;Bo Gao;Lixin Wang
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
12.A Study of unique galvanic failure due to interaction with well structure

机译：与井眼结构相互作用引起的独特流电失效研究
- 作者：Yi W.B.;Phoong B.F.;Sheng H.F.;Wang D.X.;Wee T.L.;Wang Z.H.;Cong H.;Choi S.G.;Tan J.B.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
13.A technique to investigate the root cause of Write Recovery Time (tWR) failure

机译：研究写恢复时间（tWR）失败的根本原因的技术
- 作者：Chen Chien-Fu;Chang Hung-Jia;Hsiao Mei-Ying;Peng Sheng-Hsiu;Lin Yi-Min
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
14.A unified drain current model for poly-Si and a-InGaZnO TFTs under different temperatures

机译：多晶硅和a-InGaZnO TFT在不同温度下的统一漏极电流模型
- 作者：Zhiyuan Han;Mingxing Wang;Yong Wu;Haiqin Zhou;Jin He
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
15.A unified model to understand degradation of a-InGaZnO TFTs under various gate bias stresses with or without light illumination

机译：一个统一的模型，以了解在有或没有光照的情况下，a-InGaZnO TFT在各种栅极偏置应力下的退化
- 作者：Mingxiang Wang;Jie Xu;Huaisheng Wang;Qi Shan
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- InGaZnO;
- charge trapping;
- gate bias stress;
- light illumination;
- oxygen vacancy;
- thin film transistors;
16.Acid decapsulation for silver wire bonded package

机译：银丝键合封装的酸解封
- 作者：Suzuki Satoshi;Yamaguchi Mamiko
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
17.Active Electrostatic Force Microscopy

机译：主动静电显微镜
- 作者：Ippolito Stephen;Zumwalt Sean;Erickson Andy
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
18.An abnormal threshold voltage variation of the p-type thin-film transistors under DC bias stress

机译：直流偏置应力下p型薄膜晶体管的阈值电压异常变化
- 作者：Han-Wen Liu;Wei-Fong Cao;Tsung-Kuei Kang;Fang-Hsing Wang
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
19.An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

机译：具有Ti / Al / W欧姆金属结构的无金GaN高电子迁移率晶体管
- 作者：Jing-Neng Yao;Yueh-Chin Lin;Yu-Lin Chuang;Yu-Xiang Huang;Wang-Cheng Shih;Sze Simon M.;Chang Edward Yi
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
20.An efficient method of exposing on-chip polyfuses using dry chemical Plasma etching technique

机译：使用干化学等离子刻蚀技术曝光芯片上多熔丝的有效方法
- 作者：Mendaros R.G.;Marcelo M.T.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
21.An initiative to develop a new approach for fracture characterization of silicon die crack

机译：一项旨在开发一种新方法来表征硅晶粒裂纹的方法
- 作者：Lin P.;Xue M.;Chai C.M.;Zhang H.S.;Xu H.;Zhou K.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
22.An Investigation of DC/AC hot carrier degradation in multiple-fin SOI FinFETs

机译：多鳍SOI FinFET中DC / AC热载流子退化的研究
- 作者：Jiang H.;Liu X.Y.;Xu N.;He Y.D.;Du G.;Zhang X.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- Silicon-on-insulator;
- hot carrier degradation;
- multi-gate FET;
- reliability;
23.An investigation on the high temperature dependence of the HCI on NMOSFET transistor

机译：HCI对NMOSFET晶体管的高温依赖性研究
- 作者：Xiaodong Zhao;Chien Wei-Ting Kary;Guan Zhang;Jianshu Yu;Gang Niu;Xiaobo Duan
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
24.Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes

机译：叠层SiO x / SiO 2 固体电解质的银可编程金属化电池电阻转换的电流顺从性分析
- 作者：Jer-Chyi Wang;Chun-Hsiang Chiu;Ya-Ting Chan;Chao-Sung Lai
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
25.Application of atomic force probing on the polysilicon patterning issue

机译：原子力探测在多晶硅图形化问题中的应用
- 作者：Ng P.T.;Chen C.Q.;Ang G.B.;Quah C.T.;Ng H.P.;Yip K.H.;Mai Z.H.;Lam J.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
26.Application of FIB-SEM and Raman spectroscopy for investigating conductive carbon particles in epoxy encapsulation of IC

机译：FIB-SEM和拉曼光谱在研究IC环氧封装中导电碳颗粒中的应用
- 作者：Shih Chia Lai;Sharma Pradeep;Otte Rik;Jung Hao Kung;Yao-han Wang;Chen Sharon
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
27.Application of voltage and waveform forcing method for electrical isolation of complex and loop circuit in failure analysis

机译：电压和波形强迫方法在复杂回路电气隔离中的应用
- 作者：Li Tian;Kuibo Lan;Gaojie Wen;Xiaocui Li;Dong Wang
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- Failure analysis;
- complex and loop circuit;
- voltage and waveform forcing method;
28.Application study of simply and low cost numerical aperture increasing lens (NAIL) system for OBIRCH and EMMI in backside failure analysis

机译：用于OBIRCH和EMMI的简单，低成本数值孔径增加透镜（NAIL）系统在背面故障分析中的应用研究
- 作者：Li Tian;Guoqiang Zhang;Kuibo Lan;Gaojie Wen;Dong Wang
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- EMMI;
- Fialure analysis;
- IR image;
- NAIL system;
- OBIRCH;
29.Copper dendrite formation on laser fuse structures of flip chip die

机译：倒装芯片激光熔丝结构上的铜枝晶形成
- 作者：Kho W.F.;Chan Gary H. G.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
30.Bump resistance change behavior due to Cu-Sn IMCs formation with various solder diameters

机译：由于形成了具有各种焊料直径的Cu-Sn IMC而导致的抗凸点变化行为
- 作者：Wan-Lin Hsieh;Chung-Kuang Lin;Chau-Jie Zhan;Yu-wei Huang;Chih Chen
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
31.Characteristic improvement of inkjet printed Ag interconnects using tape on-off and mirror-reaction processes

机译：使用胶带开关和镜面反应工艺改善喷墨印刷Ag互连的特性
- 作者：Zi-Li Guo;Yu-Min Fu;Yu-Ting Cheng;Bor-Yuan Shew;Pu-Wei Wu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
32.Characterization and analysis of tiny in-line defect in 28nm process

机译：28nm工艺中微小的在线缺陷的表征与分析
- 作者：Zhao Gary Yaobin;Lee J.H.;Dai Tom;Zhang Mark;Chien Kary
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
33.Combining design simulations with nano-probing to root-cause a processor device glitch issue

机译：将设计仿真与纳米探测相结合，以根源引起处理器设备故障问题
- 作者：Teo C.W.;Khatri Dnyan;Wei M.S.;Lim S.H.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
34.Comparative study of different technology of mechanical decap to check excess solder issue — Conventional versus new approaches

机译：比较各种机械去盖技术以检查多余焊锡问题的比较研究-传统方法与新方法
- 作者：Ramuhzan Fadhilah Nurani;Hasan Zainal Abas;Yusof Yusnani Mohamad
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
35.Comparative study on sample preparation techniques for Cu-Al interfacial analysis

机译：铜铝界面分析样品制备技术的比较研究
- 作者：Lai-Seng Yeoh;del Rosario Amalia;Chee-Wah Tam;Kok-Cheng Chong;Li Susan;Adem Ercan;Tracy Bryan
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
36.Contaminant failure analysis: A particle library and its search engine

机译：污染物失效分析：粒子库及其搜索引擎
- 作者：Mei-Ju Lu;Ying-Ta Chiu;Ping-Feng Yang
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
37.Correlating SEM and SPM for nanoprobing in failure analysis

机译：将SEM和SPM进行关联以进行失效分析中的纳米探测
- 作者：Kemmler M.;Rummel A.;Schock K.;Kleindiek S.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
38.Cu concentration from backside contamination induced STI crack after High Temperature Stress

机译：高温应力后背面污染引起的STI裂纹中的Cu浓度
- 作者：Jim Lee;Hsiang J. Huang;Gunnar Zimmermann;Alexander Ambatiello;Xu X. Wang;Tim J. Pifer
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
39.Cu via process optimization by electro-migration estimation testing

机译：通过电迁移估计测试通过工艺优化获得铜
- 作者：YiHeng Chen;Hui-Lan Sung;Shao-Jui Lo
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
40.Cu wire bonding process induced fail mechanism — Inter Layer Dielectric Crack

机译：铜线键合工艺引起的失效机理—层间介电裂纹
- 作者：Feng-Min Chang;Liu Nicolas;Liu Kevin
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
41.Current imaging technique with nanometer resolution for failure analysis of metal layers

机译：具有纳米分辨率的电流成像技术，用于金属层的故障分析
- 作者：Biring Sajal;Chih-Feng Chiang;Chia-Hsiang Yen;Chih-Hsun Chu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
42.Cutting-edge technologies for failure analysis and their applications in industry

机译：先进的故障分析技术及其在工业中的应用
- 作者：Kuo P.S.;Liu C.Y.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
43.Debug of implant angle deviation based on SIMS analysis

机译：基于SIMS分析的种植体角度偏差调试
- 作者：Jiang Bei Shi;Zhen Yuan Li;Xiao Gang Zheng;AiMin Li;Qi Hua Zhang;Ming Li;Wei Ting Chien;Yao Bin Zhao
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
44.Debugging MBIST hard fails without bitmapping

机译：没有位图调试MBIST硬失败
- 作者：Yeoh B.L.;Goh S.H.;You G.F.;Hao Hu;Sio W.L.;Lam Jeffrey
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
45.Fast and reliable charge-trap non-volatile memories using low thermal budget processes in monolithic 3DIC application

机译：在单片3DIC应用中使用低热预算流程实现快速可靠的电荷陷阱非易失性存储器
- 作者：Wen-Hsien Huang;Chih-Chao Yang;Tung-Ying Hsieh;Hsing-Hsiang Wang;Chang-Hong Shen;Jia-Min Shieh
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
46.Fast feature based non-destructive fault isolation in 3D IC packages utilizing virtual known good device

机译：利用虚拟已知良品在3D IC封装中基于快速功能的无损故障隔离
- 作者：Lee K.C.;Alton J.;Igarashi M.;Barbeau S.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
47.Determination of iodide in clean room air by ion chromatography

机译：离子色谱法测定洁净室内空气中的碘化物
- 作者：JianMing Zhang;Lei Zhu;Zhao S.P.;Liu B.H.;Lim Edmund;Ee C.K.;Lau D.K.;Lam Jeffrey
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
48.Diamond milling with an Atomic Force Microscope

机译：用原子力显微镜进行金刚石铣削
- 作者：Ippolito Stephen;Zumwalt Sean;Erickson Andy
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
49.Die front-end defect isolation case study using a combination of atomic force probing and transmission electron microscopy techniques

机译：结合原子力探测和透射电子显微镜技术的模具前端缺陷隔离案例研究
- 作者：Chua Kok Keng;Lee Lan Yin;Tan Grace
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
50.Double snapback phenomena in transient power-rail ESD clamp circuits for latch-up free concerns

机译：瞬态电源轨ESD钳位电路中的双重回跳现象，无需担心闩锁
- 作者：Guangyi Lu;Yuan Wang;Xing Zhang
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
51.Effect of pre-CMP annealing on TSV pumping in thermal budget and reliability test

机译：CMP预退火对热预算和可靠性测试中TSV抽运的影响
- 作者：Jing X.;Lee U.-H.;Xu C.;Niu Z.;Hao H.;Bae J.-Y.;Won J.;Zhang W.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
52.Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor

机译：串联电阻对碳化硅MOS电容器介电击穿现象的影响
- 作者：Sato S.;Hiroi Y.;Yamabe K.;Kitabatake M.;Endoh T.;Niwa M.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
53.Effects of interface properties in SiC MOSFETs on reliability

机译：SiC MOSFET的界面特性对可靠性的影响
- 作者：Mori Y.;Hisamoto D.;Tega N.;Matsumura M.;Yoshimoto H.;Shima A.;Shimamoto Y.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
54.Effects of the initial stress at the bottom of open TSVs

机译：开孔TSV底部的初始应力的影响
- 作者：Papaleo Santo;Zisser Wolfhard H.;Ceric Hajdin
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
55.Electrical model of a PMOS body biased structure in triple-well technology under pulsed photoelectric laser stimulation

机译：脉冲光电激光激发下三阱技术中PMOS体偏置结构的电模型
- 作者：Borrel N.;Champeix C.;Kussener E.;Rahajandraibe W.;Lisart M.;Sarafianos A.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
56.Electrical simulation on the localized NVM failed cell by AFP nanoproing

机译：通过AFP纳米加工对局部NVM故障细胞进行电学模拟
- 作者：Chen C.Q.;Ang G.B.;Ng H.P.;Alfred Q.;Huang Y.M.;Mai Z.H.;Lam Jeffery
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
57.Enhanced passivation integrity test for improved passivation failure detection

机译：增强的钝化完整性测试，用于改进钝化故障检测
- 作者：Lee S.;Ang P.C.;Mo Z.Q.;Zhao S.P.;Lam J.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
58.Evaluation of copper nanoparticles for low temperature bonded interconnections

机译：低温粘结互连中铜纳米颗粒的评估
- 作者：Byung Hoon Lee;Mei Zhen Ng;Zinn Alfred A.;Chee Lip Gan
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
59.Evaporation method to eliminate Si-Matrix interferences for thick oxide wafers VPD-ICPMS analysis

机译：蒸发法消除硅基氧化物对厚氧化物晶片的干扰VPD-ICPMS分析
- 作者：Hwee Hong Eng;Lei Zhu;Chze Wee Loh;Si Ping Zhao;Lam Jeffrey
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
60.Improved fault localization method for power devices

机译：改进的电力设备故障定位方法
- 作者：Huaping Lai;Liao Scott;Wei Xu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
61.Fabrication and reliability investigation of copper pillar and tapered through silicon via (TSV) for direct bonding in 3D integration

机译：用于3D集成中直接键合的铜柱和锥形穿硅通孔（TSV）的制造和可靠性研究
- 作者：Yu-Wei Chang;Kuan-Neng Chen
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
62.Fabrication of a novel device by release the stress in a reliable way

机译：通过以可靠的方式释放应力来制造新型设备
- 作者：Shuaipeng Wang;Jinling Yang;Yanning Chen;Haifeng Zhang;Dongyan Zhao
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- MEMS;
- SOI precess;
- bio-sensor;
- cantilever;
- reliable;
63.Factors affecting hysteresis in the transfer curves of a-IGZO TFTs under illumination and raised temperature

机译：在光照和高温下a-IGZO TFT传输曲线中影响磁滞的因素
- 作者：Yi-Jung Chen;Ya-Hsiang Tai
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
64.Failure localization on a Low-Dropout Voltage Regulator with Reset Automotive Device due to wire bonding issue

机译：由于引线键合问题而在带有复位汽车设备的低压降稳压器上的故障定位
- 作者：Galarce Rowin V.;Vagues Lynn Colette
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
65.Failure mechanism of VCSELs in optical mouse applications at non-hermitic conditions

机译：VCSEL在非Hermit条件下在光学鼠标应用中的失效机理
- 作者：Dreybrodt J.;Malacarne F.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
66.Fault isolation and TEM study in the state-of-art Thin-Film Transistor

机译：最新的薄膜晶体管中的故障隔离和TEM研究
- 作者：Yongkai Zhou;Shik Lin Lee;Chao Fu;Younan Hua;Xiaomin Li
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
67.Fault isolation using Electrically-enhanced LADA (EeLADA)

机译：使用电增强型LADA（EeLADA）进行故障隔离
- 作者：Goh S.H.;Yeoh B.L.;You G.F.;Hao Hu;Sio W.L.;Lam Jeffrey;Chua C.M.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
68.Feasibility study of TOF-SIMS surface measurement for Aluminum bond pad fluorine contamination

机译：TOF-SIMS表面测量用于铝焊垫氟污染的可行性研究
- 作者：Han Wei Teo;Yanjing Yang;Yun Wang;Lei Zhu;Zhi Qiang Mo;Si Ping Zhao;Lam Jeffrey
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- AES;
- Aluminum Bond Pad;
- Fluorine Contamination;
- Ion-yield enhancement;
- TOF-SIMS;
69.FIB tilting method for thin TEM lamella preparation

机译：薄TEM片制备的fib倾斜方法
- 作者：Liew Kaeng Nan;Lee Meng Lung;Chen Tung Hung
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
70.Four-Point Bending Methodology development for 40nm technology Cu/Nblk interface adhesion measurement

机译：用于40nm技术Cu / Nblk界面附着力测量的四点弯曲方法学开发
- 作者：Wang Y.;Yang Y.J.;Chong M.M.;Nistala R.R.;Rao X.S.;Seet C.S.;Mo Z.Q.;Zhao S.P.;Lam J.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
71.From VLSI to WLSI an introduction to 3D wafer level system integration

机译：从VLSI到WLSI，介绍3D晶圆级系统集成
- 作者：Chih Hang Tung;Yu Doug
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
72.Galvanic corrosion mechanism and suppressed solution on Al/Cu pads

机译：铝/铜垫上的电偶腐蚀机理和抑制溶液
- 作者：Ko Andrew Chang-Yen;Burnett Andy;Chen Linker;Liu Kevin
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
73.Gate oxide reliability improvement for UMOS technology

机译：UMOS技术的栅极氧化物可靠性改进
- 作者：Gang Niu;Chien Wei-Ting Kary;Guan Zhang;Jianshu Yu;Xiaodong Zhao;Xiaobo Duan
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- GOI Vramp;
- HTGB;
- Soft Dry Etch;
- Thick Oxide;
- Trench Gate Oxide;
- UMOS;
74.Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

机译：具有二次谐波生成映射的单层MoS2晶体管的晶粒尺寸效应
- 作者：Chih-Pin Lin;Li-Syuan Lyu;Ching-Ting Lin;Pang-Shiuan Liu;Wen-Hao Chang;Lain-Jong Li;Tuo-Hung Hou
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
75.High Resistance Open localization

机译：高抗性开放本地化
- 作者：Chen Yen-Hao Jack;Po Chih Huang;Talanov Vladimir;Orozco Antonio;Gaudestad Jan
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
76.Highly accurate TEM/EDS analysis to identify the stack oxide-nitride-oxide structure of advanced NAND flash products

机译：高精度TEM / EDS分析，可识别高级NAND闪存产品的堆叠氧化物-氮化物-氧化物结构
- 作者：Lin C.C.;Chen S.Y.;Wang J.;Hsieh C.L.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
77.HV PMOSFET VT shift suppression after HTOL by modified p-Hump prevention ion implant

机译：改进的防止p-驼峰离子注入抑制HTOL后的HV PMOSFET V T 移位
- 作者：Kyenam Lee;Hyunho Jang;Jeonghyeon Park;Jintae Kim;Mansik Oh;Ulkyu Seo;Byungsub Kim
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
78.Image improvement using image processing for scanning acoustic tomograph images

机译：使用图像处理扫描断层扫描仪图像进行图像改进
- 作者：Sakai Kaoru;Kikuchi Osamu;Takada Masafumi;Sugaya Natsuki;Ohno Shigeru
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
79.Impact of aspect ratio and line spacing on microstructure in damascene Cu interconnects

机译：长宽比和线间距对镶嵌铜互连中微结构的影响
- 作者：Chen L.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
80.Impact of fluorine on Idsat of field-effect transistor

机译：氟对场效应晶体管Idsat的影响
- 作者：Lei Zhu;Ong Kenny;Mo Z.Q.;Zhao S.P.;Lam Jeffrey
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
81.Improve latch-up immunity by circuit solution

机译：通过电路解决方案提高抗闩锁性
- 作者：Hui-Wen Tsai;Ming-Dou Ker
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
82.Improved CT reconstruction resolution using Differential Cone-Beam CT reconstruction

机译：使用差分锥束CT重建提高CT重建分辨率
- 作者：Syahirah Z.;Zee B.;Liu T.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
83.Improved reliability of GaN HEMTs using N2 plasma surface treatment

机译：使用N2等离子体表面处理提高GaN HEMT的可靠性
- 作者：Liu S.C.;Dai G.M.;Chang E.Y.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
84.Improving the resistive switching reliability via controlling the resistance states of RRAM

机译：通过控制RRAM的电阻状态来提高电阻切换的可靠性
- 作者：Yang Li;Shibing Long;Meiyun Zhang;Guoming Wang;Yan Wang;Xiaoxin Xu;Dinglin Xu;Hangbing Lv;Qi Liu;Ming Liu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
85.InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

机译：具有自对准镍合金源极/漏极的InGaAs金属氧化物半导体FET
- 作者：Shin-Yuan Wang;Chao-Hsin Chien;Jin-Ju Lin;Chun-Yen Chang
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
86.Junction/well stain (delineation) technique to unveil different types of implantation defects

机译：结/孔污点（描绘）技术可揭示不同类型的植入缺陷
- 作者：Tze Ping Chua;Chee Hong Chong;Chen Tung Hung
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
87.Justification and Monte Carlo simulation of microstructure evolution process of conductive filament in reset transition in Cu/HfO2/Pt RRAM

机译：Cu / HfO 2 / Pt RRAM复位转变过程中导电丝微结构演变过程的证明和蒙特卡罗模拟
- 作者：Meiyun Zhang;Shibing Long;Guoming Wang;Xiaoxin Xu;Yang Li;Qi Liu;Hangbing Lv;Haitao Sun;Ming Liu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
88.Micromechanical robustness tests of 28nm BEOL layer stacks

机译：28nm BEOL叠层的微机械强度测试
- 作者：Langer Eckhard;Geisler Holm
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
89.Laser-Assisted Device Alteration (LADA) for fault isolation and quick design fix in marginality failure

机译：激光辅助设备变更（LADA）用于故障隔离和边缘故障时的快速设计修复
- 作者：Foo Loke Sheng;Mun Rachel Siew Sok;Teck Daniel Ting Kung
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
90.Leakage current study and relevant fault localization by IR-OBIRCH

机译：利用IR-OBIRCH进行漏电流研究和相关故障定位
- 作者：Chunlei Wu;Corinne Berges
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
91.Localized Random Telegraphic Noise Study in HfO2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps

机译：HfO 2 电介质堆叠中的局部随机电报噪声研究，使用扫描隧道显微镜—过程和应力诱捕器的分析
- 作者：Ranjan A.;Shubhakar K.;Raghavan N.;Thamankar R.;Bosman M.;OShea S.J.;Pey K.L.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
92.Low voltage In-lens secondary electron imaging in device failure analysis

机译：低压透镜内二次电子成像在设备故障分析中的应用
- 作者：Raborar Mary Grace C.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
93.Low-κ and High-κ breakdown statistics with variability: Clustering model versus reconstruction methodology (Invited)

机译：具有可变性的低κ和高κ击穿统计：聚类模型与重建方法（邀请）
- 作者：Wu Ernest;Baozhen Li;Stathis James
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- Bimodal;
- Clustering model;
- Non-uniform dielectric breakdown;
- Reliability;
- TDDB;
- Variability;
94.Magnetic Current Imaging using multi path analysis for power short localization

机译：使用多路径分析的磁流成像技术可实现电源短路定位
- 作者：Gaudestad Jan;Orozco Antonio;Matthews John;Po Chih Huang;Chen Yen-Hao Jack
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
95.Methodology for stability evaluation on the Multi-level storages of oxide-based conductive bridge RAM (CBRAM)

机译：氧化物基导电桥RAM（CBRAM）的多层存储稳定性评估的方法
- 作者：Xiaoxin Xu;Hongtao Liu;Qing Luo;Hangbing Lv;Meiyun Zhang;Ming Wang;Guoming Wang;Yang Li;Dinglin Xu;Qi Liu;Shibing Long;Ming Liu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
- Multi-level per cell (MLC);
- data retention;
- random telegraph noise (RTN);
96.Micro analysis regarding package interconnection

机译：封装互连的微观分析
- 作者：Hashimoto Hideki
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
97.New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

机译：HfO 2 薄膜电阻转换起源的新见解：局部机械强度的作用
- 作者：Yuanyuan Shi;Yanfeng Ji;Fei Hui;Nafria Montserrat;Porti Marc;Bersuker Gennadi;Lanza Mario
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
98.New method for chemical characterization of polymer materials in industrial devices : AFM-IR with FIB sample preparation

机译：工业设备中高分子材料化学表征的新方法：带FIB样品制备的AFM-IR
- 作者：Baden Naoki;Yasuda Mitsunobu;Yoshida Akiyo;Muraki Naoki
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
99.Novel interposer scheme for 3D integration

机译：用于3D集成的新型插入器方案
- 作者：Ko C.T.;Lo W.C.
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年
100.OBIRCH analysis of electrostatic discharge ICs

机译：静电放电IC的OBIRCH分析
- 作者：Xuanlong Chen;Qingsa Li;Liyuan Liu;Bing Liu
- 会议名称：《International Symposium on the Physical and Failure Analysis of Integrated Circuits》 | 2015年