ISOTOPE-MODIFIED HAFNIUM AND SEMICONDUCTOR DIELECTRICS

摘要

Various methods and systems are provided for facilitating the creation of a new and potentially thinner form of dielectric. Alternatively, for a given capacitance, a thicker layer can be created with lower risk of leakage. The present disclosure will enable the creation of physically smaller electronic components. Isotope-Modified Hafnium Dielectric is used to create a dielectric layer with a greater range of dielectric coefficients, which may enable the creation of smaller and/or more reliable electronic components.