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Memory stacks having silicon oxynitride gate-to-gate dielectric layers and methods for forming the same
Memory stacks having silicon oxynitride gate-to-gate dielectric layers and methods for forming the same
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机译:具有氧化硅栅极到栅极介电层的存储器堆叠和用于形成相同的方法
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摘要
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, and a NAND memory string. The memory stack includes a plurality of interleaved gate conductive layers and gate-to-gate dielectric layers above the substrate. Each of the gate-to-gate dielectric layers includes a silicon oxynitride layer. The NAND memory string extends vertically through the interleaved gate conductive layers and gate-to-gate dielectric layers of the memory stack.
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