首页> 外国专利> TFT substrate including barrier layer including silicon oxide layer and silicon silicon nitride layer, Organic light-emitting device comprising the TFT substrate, and the manufacturing method of the TFT substrate

TFT substrate including barrier layer including silicon oxide layer and silicon silicon nitride layer, Organic light-emitting device comprising the TFT substrate, and the manufacturing method of the TFT substrate

机译:TFT基板包括包括氧化硅层和氮氮化硅层的阻挡层,包括TFT基板的有机发光器件,以及TFT基板的制造方法

摘要

The present invention provides a first plastic layer comprising polyimide; a first barrier layer positioned on the first plastic layer; a first intermediate layer disposed on the first barrier layer and in direct contact with the first barrier layer; a second plastic layer disposed on the first intermediate layer and in direct contact with the first intermediate layer, the second plastic layer including polyimide; a TFT layer and an organic light emitting device positioned on the second plastic layer; and an encapsulation thin film encapsulating the organic light emitting device, wherein the first intermediate layer includes at least one of an amorphous material, a metal thin film, and a metal oxide thin film, and the encapsulation thin film includes the TFT layer and the organic light emitting device The organic light emitting diode display device overlaps the first plastic layer, the first barrier layer, the first intermediate layer, and the second plastic layer from the outside.
机译:本发明提供一种包含聚酰亚胺的第一塑料层;定位在第一塑料层上的第一阻挡层;设置在第一阻挡层上并与第一阻挡层直接接触的第一中间层;第二塑料层设置在第一中间层上并与第一中间层直接接触,第二塑料层包括聚酰亚胺; TFT层和位于第二塑料层上的有机发光装置;和封装有机发光器件的封装薄膜,其中第一中间层包括非晶材料,金属薄膜和金属氧化物薄膜中的至少一种,并且包封薄膜包括TFT层和有机物发光器件有机发光二极管显示装置与外部的第一塑料层,第一阻挡层,第一中间层和第二塑料层重叠。

著录项

  • 公开/公告号KR102270084B1

    专利类型

  • 公开/公告日2021-06-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020200159095

  • 申请日2020-11-24

  • 分类号H01L27/32;H01L51;H01L51/50;H01L51/52;H01L51/56;H05B33/04;

  • 国家 KR

  • 入库时间 2022-08-24 19:51:34

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