首页> 外国专利> METHOD FOR TESTING SECONDARY ELECTRICAL POWER SOURCES OF RADIO ELECTRONIC EQUIPMENT FOR RESISTANCE TO THE EFFECTS OF A PULSE OF GAMMA RADIATION OF SIMULATING INSTALLATIONS

METHOD FOR TESTING SECONDARY ELECTRICAL POWER SOURCES OF RADIO ELECTRONIC EQUIPMENT FOR RESISTANCE TO THE EFFECTS OF A PULSE OF GAMMA RADIATION OF SIMULATING INSTALLATIONS

机译:用于测试无线电电子设备的二次电力源的方法,实现模拟安装伽马辐射脉冲效应的抵抗力

摘要

FIELD: electrical engineering.;SUBSTANCE: invention relates to the field of electrical engineering, in particular to testing electronic equipment for resistance to pulsed gamma radiation. The technical result consists in taking into account the effect on the output voltage of the secondary electric power source (SEPS) of the increasing consumption currents of the connected blocks of electronic equipment when exposed to pulsed gamma radiation. It is achieved by the sequential irradiation of electronic equipment units with a gamma-radiation pulse and measurement of the amplitude-time characteristics (ATC) of the current consumption and supply voltage of each unit. Based on the results of measurements of these parameters, the ATC of electrical conductivity G1i is calculated, then a small-sized semiconductor model with an amplitude-time characteristic of the radiation electrical conductivity G2i adequate to the value of G1i is selected for each irradiated block. Further, small-sized semiconductor models are additionally connected to the output electrical circuit of the SEPS parallel to the load resistors and irradiated with a pulse of gamma radiation with the specified parameters. The radiation resistance of the power source is estimated by the degree of change in the ATC of the output voltage of the SEPS.;EFFECT: increasing consumption currents' effect on the secondary electric power source when exposed to pulsed gamma radiation taken into account. ;1 cl, 5 dwg
机译:现场:电气工程。物质:发明领域涉及电气工程领域,尤其涉及测试电子设备的抗脉冲伽马辐射。技术结果包括考虑到在暴露于脉冲伽马辐射时所连接块的次级电力电源(SEPS)的输出电压的影响。通过具有伽马辐射脉冲的电子设备单元的顺序照射和测量每个单元的电流消耗和电源电压的幅度时间特性(ATC)的测量来实现。基于这些参数的测量结果,计算电导率G1i的ATC,然后为每个照射块选择具有足够辐射电导率G2i的幅度 - 时间特性的小半导体模型,为每个辐照块选择了足够的G1i值。此外,小尺寸的半导体模型另外连接到平行于负载电阻的SEP的输出电路,并用指定参数用伽马辐射的脉冲照射。电源的辐射电阻通过SEPS输出电压的ATC的变化程度估算。;效果:在暴露于考虑脉冲伽马辐射时增加消耗电流对二次电源的影响。 ; 1 cl,5 dwg

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