A method (100) for growing at least one III/V nano-ridge (200) on a silicon substrate (310) in a chamber. The method comprises: patterning (110) an area on a silicon substrate (310) thereby forming a trench (320) on the silicon substrate; growing (120) the III/V nano-ridge (200) by initiating growth (122) of the III/V nano-ridge (200) in the trench (320), thereby forming and filling layer(210) of the nano-ridge inside the trench, and by continuing growth (124) out of the trench (320) on top of the filling layer (210), thereby forming a top part (220) of the nano-ridge (200), wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.
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