INTEGRATED CIRCUIT INCLUDING AT LEAST ONE NANO-RIDGE TRANSISTOR

摘要

An integrated circuit is produced from a silicon substrate (1) and includes at least one nano-ridge transistor formed from III-V semiconducting crystal portions (4-7). The III-V portions are grown epitaxially from the silicon substrate using an intermediate portion (3) which is adapted for producing aspect ratio trapping. The nano-ridge transistor has reduced footprint on the silicon substrate, may be adapted for power RF-applications, and can be combined with MOS- or CMOS transistors within one and same integrated circuit.