首页> 外国专利> METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A MOLYBDENUM NITRIDE FILM

METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A MOLYBDENUM NITRIDE FILM

机译:通过循环沉积工艺和包括氮化硼膜的相关半导体器件结构在基板表面上沉积氮化钼膜的方法

摘要

A method of depositing a molybdenum nitride film on a surface of a substrate is disclosed. The method includes providing a substrate into a reaction chamber; And directly depositing a molybdenum metal film on the surface of the substrate by performing one or more unit deposition cycles of the periodic deposition process, wherein the unit deposition cycle includes contacting the substrate with a first vapor phase reactant including a molybdenum halide precursor; And contacting the substrate with a second gaseous reactant including a nitrogen precursor. A semiconductor device structure including a molybdenum nitride film is also disclosed.
机译:公开了一种在基板的表面上沉积氮化钼膜的方法。该方法包括将基材提供到反应室中;通过进行周期性沉积工艺的一个或多个单位沉积循环,通过连续沉积工艺的一个或多个单位沉积循环直接在基板表面上直接沉积钼金属膜,其中单元沉积周期包括使基板与包括钼卤化物前体的第一气相反应物接触;用包括氮前体的第二气态反应物接触基板。还公开了包括氮化钼膜的半导体器件结构。

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