A method for the production of semiconductor zones with precise thickness of between surfaces adhere pn - by means of turns in monocrystalline half conductor bodies of semiconductor components, in particular of three zones transistors

摘要

891,572. Coating with metals. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 12, 1960 [May 28, 1959], No. 16840/60. Class 82(2). [Also in Group XXXVI] A P type monocrystalline germanium wafer shaped as described in Group XXXVI is placed in a sealed chamber 17 with finely divided 0À01 ohm. cm. phosphorus doped N type germanium 18 and germanium iodide as a carrier gas. The finely divided germanium source 18 is maintained at 550‹C., the wafer at 400‹C, and the rest of the chamber at 410‹C. for 48 hours during which the germanium is transported from source 18 and deposited epitaxially at 7 on the wafer.