GAAS HIGHHLOW TYPE IMPATT DIODE

摘要

PURPOSE:To stably provide a GaAs Hi-Lo type IMPATT mode diode in high yield by imparting an optinum condition of Hi and Lo region carrier density enabling the high efficiency operation of the diode thereto. CONSTITUTION:An n-type GaAs buffer layer 2, an n-type GaAs Lo region 3, an n-type GaAs Hi region 4 and a p-type GaAs layer 5 are sequentially laminated on an n-type GaAs substrate 1, and an ohmic electrode 6 is formed on the outside thereof to form a pn-junction GaAs Hi-Lo type IMPATT mode diode. Then, the Hi region carrier density NH and Lo region carrier density NL are so defined as to become the conditions specified by the right formula (1) and (2).