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method for under reduced pressure epitaxiale grow from a thin layer of a compound of the type iii (a) - v (a) of the periodic system of elements and halfgeleiderinrichting,obtained by applying this method.
method for under reduced pressure epitaxiale grow from a thin layer of a compound of the type iii (a) - v (a) of the periodic system of elements and halfgeleiderinrichting,obtained by applying this method.
1,270,550. Semi-conductor device manufacture. WESTERN ELECTRIC CO. Inc. 22 Dec., 1969 [27 Dec., 1968], No. 62287/69. Heading H1K. [Also in Divisions C1 and C7] An epitaxial film of Group III(a) and V(a) elements (Mendelyeev Table given in the Handbook of Chemistry and Physics) is deposited on a substrate of e.g. Si, Ge, gallium arsenide, phosphide or arsenic phosphide, indium arsenide or phosphide or sapphire. Examples of the film are (1) gallium arsenide, (2) gallium phosphide, (3) Ga.As 0 . 25 P 0 . 75 , (4) gallium arsenide with Zn, 'and (5) Gallium arsenide with Te.
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机译：1,270,550。半导体器件制造。 WESTERN ELECTRIC CO。Inc. 1969年12月22日[1968年12月27日]，编号62287/69。标题H1K。 [也在C1和C7区中]将III（a）族和V（a）族元素的外延膜（在化学和物理手册中给出的孟德尔耶夫表）沉积在例如硅酸盐的衬底上。 Si，Ge，砷化镓，磷化物或磷化砷，砷化铟或磷化物或蓝宝石。膜的实例是（1）砷化镓，（2）磷化镓，（3）Ga.As 0。 25 P 0。 75，（4）砷化镓与Zn，和（5）砷化镓与Te。
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