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Brief description of embodiments of a layer containing silicon and photo - electrical conversion device implementing this process
Brief description of embodiments of a layer containing silicon and photo - electrical conversion device implementing this process
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机译:实施该工艺的含硅层和光电转换装置的实施方案的简要说明
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摘要
The process consists of introducing into the silicon-containing layer at the same time as silicon deposition, another element of column IVa of the periodic classification in a proportion equal to or below 5% of the number of silicon atoms and greater than 0.1%. According to a preferred variant, this element is germanium. Deposition takes place at a temperature close to the crystallization temperature T. The process can comprise a subsequent phase during which the deposited layer undergoes heat treatment in an atmosphere of a plasma containing hydrogen or one of its isotopes at a temperature below the crystallization temperature T of the layer.
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