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Unframed via interconnection with dielectyric etch stop
Unframed via interconnection with dielectyric etch stop
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机译:通过与介电蚀刻停止层的互连来取消框架
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摘要
A layer of aluminum oxide or other insulative metal oxide is employed as an etch stop in the fabrication of very large scale integrated circuit devices. The use of such etch stops permits fabrication of unframed or borderless via openings and correspondingly permits greater metallization line pitch, smaller circuit features, and more reliable interlayer electrical contact. A method for insulative metal oxide deposition is also described.
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