首页> 外国专利> POWDER COMPOSITION FOR PRODUCING CARBON/SILICON CARBIDE COMPOSITE MATERIAL, PRODUCTION OF CARBON/SILICON CARBIDE COMPOSITE MATERIAL AND CARBON/SILICON CARBIDE COMPOSITE MATERIAL

POWDER COMPOSITION FOR PRODUCING CARBON/SILICON CARBIDE COMPOSITE MATERIAL, PRODUCTION OF CARBON/SILICON CARBIDE COMPOSITE MATERIAL AND CARBON/SILICON CARBIDE COMPOSITE MATERIAL

机译:用于生产碳/硅碳化物复合材料的粉末组合物,碳/硅碳化物复合材料的生产以及碳/硅碳化物复合材料的生产

摘要

PURPOSE:To improve moldability and sinterability and to improve density, bending strength, etc., by compounding =1 kinds of sintering assistant powders selected from a group of boron (compd.) with a mixture composed of the fine particles of a self- sinterable spheroidal carbonaceous material and SiC powder. CONSTITUTION:The mixture (C) is obtd. by compounding 5 to 30 pts.wt. fine particles (A) of the self-sinterable spheroidal carbonaceous material which are mesocarbon microbeads of =20mum average grain size contg. =5wt.% binder component (beta-resin) made from a coal tar as a raw material and 95 to 70 pts.wt. SiC powder (B) having =1mum average grain size. The powder compsn. (D) for producing the C/SiC composite material is then produced by mixing 100 pts.wt. component C and 0.5 to 5 pts.wt. sintering assistant powders of =1mum average size selected from metal B, B4C, etc., for 30 minutes to one hour by a dry process. The component D is subjected to a pressurized molding and is temporally calcined in an nonoxidative atmosphere, following which the molding is subjected to regular calcination for 0.2 to 3 hours at 1900 to 2400 deg.C in a gaseous N2 atmosphere, by which the C/SiC composite material having =20kgf/mm2 bending strength is produced.
机译:用途:通过将选自硼(压缩)组中的> = 1种以上的烧结助剂粉末与由自生细颗粒组成的混合物混合,以提高成型性和烧结性,并提高密度,弯曲强度等。烧结球状碳质材料和SiC粉末。组成:混合物(C)。通过混合5至30 pts.wt.自烧结球形碳质材料的细颗粒(A),是平均粒径<=20μm的介孔碳微珠(续)。 ≥5wt。%的粘合剂组分(β-树脂)由煤焦油作为原料和95至70pts.wt。 SiC粉末(B)的平均粒径小于等于= 1。粉末成分。然后通过混合100pts.wt来生产用于生产C / SiC复合材料的(D)。组分C和0.5至5 pts.wt.通过干燥工艺将选自金属B,B4C等的平均粒径<= 1mum的烧结助剂粉末烧结30分钟至1小时。将组分D进行加压模制并在非氧化性气氛中暂时煅烧,然后在1900至2400℃的气态N 2气氛中将模制进行常规煅烧0.2至3小时,由此C /制备具有≥20kgf/ mm 2的弯曲强度的SiC复合材料。

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