首页>
外国专利>
Si/Au/Ni alloyed ohmic contact to n-GaAs and fabricating process therefor
Si/Au/Ni alloyed ohmic contact to n-GaAs and fabricating process therefor
展开▼
机译:与n-GaAs的Si / Au / Ni合金欧姆接触及其制造工艺
展开▼
页面导航
摘要
著录项
相似文献
摘要
An improved alloyed ohmic contact to n-type GaAs is provided utilizing a Si-based metallization of Si/Au/Ni and exhibiting low contact resistivity and high thermal stability. An improved process for fabricating the inventive contact is also provided comprising the step of first depositing the Si film on the GaAs substrate, thereby simplifying the fabrication of monolithically integrated devices, particularly advanced electro-optic devices, by incorporating self-aligned Si-based contacts in the process. A further improvement is provided in the use of a lift-off-defined Si layer as a reactive-ion etch mask to serve as the self-aligned contact in the process, thereby eliminating a critical photolithographic step of aligning the contact metallization.
展开▼
机译:利用Si / Au / Ni的Si基金属化技术,提供了一种改进的与n型GaAs的合金欧姆接触,并具有低接触电阻率和高热稳定性。还提供了一种用于制造本发明的触点的改进的方法,该方法包括以下步骤:首先,通过并入自对准的基于硅的触点,在GaAs衬底上沉积Si膜,从而简化了单片集成器件,特别是先进的电光器件的制造。正在进行中。在将剥离限定的Si层用作反应离子蚀刻掩模以在该过程中用作自对准触点的情况下,提供了进一步的改进,从而消除了对准触点金属化的关键光刻步骤。
展开▼