Fine structure formation appts. - for plasma etching of substrates or layers comprising vacuum chamber, gas supply, plasma generator, holder, etc.

摘要

Appts. for forming a fine structure comprises a vacuum chamber (1), a reactive gas supply (8), a plasma generator (3), a specimen holder (4) which acts as an electrode and which is coupled to the plasma generator (3), an elastic wave generating holder (4), and a device (7) for evacuating the vacuum chamber. The appts. may also have a counter-electrode (6) located opposite the specimen holder (4). A fine structuring process, employing the appts., is also claimed. USE/ADVANTAGE - The appts. and process are useful for (electron cyclotron) plasma etching, (magnetic field assisted) reactive ion etching, neutral beam etching, light-activated or light-assisted etching or physical ion etching of semiconductor substrates, magnetic tapes or discs, video discs, metal articles, machine elements or layers of silicon (cpds.), metal (cpds.), organic polymer (e.g. novolac resin or polyimide), ferroelectric materials (e.g. PZT), (oxide) superconductor materials or ferromagnetic materials. Excellent fine structures are formed without redn. in etching pressure and rate. (9pp Dwg.No.1/5)