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Power amplifier for broad band operation at frequencies above one ghz and at decade watt power levels
Power amplifier for broad band operation at frequencies above one ghz and at decade watt power levels
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机译:功率放大器,用于在高于1 GHz的频率和十瓦功率水平下进行宽带操作
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摘要
An octave band decade watt power amplifier is disclosed using compact and efficient MMIC fabrication techniques. The power amplifier is a two stage amplifier in which the driver transistor has two cells, and the power transistor has four cells, with each power cell double the size of the driver cells. Both transistors are of an optimized topology facilitating efficient broad band operation at matchable impedance levels. They are interconnected by three four section impedance matching networks of which the input network is coupled to a 50 ohm signal input terminal. The input and the interstage network are both formed on the same substrate as the transistors. The output network is formed on a separate substrate having a high dielectric constant (i.e. 37) which facilitates efficient and compact matching of four power transistor cells to a single output terminal for connection to a load at the conventional (50 ohm) impedance.
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