PLASMA CVD DEVICE AND CVD PROCESSING METHOD EMPLOYING THE DEVICE AND CLEANING METHOD FOR INSIDE OF THE DEVICE

摘要

PURPOSE: To provide a CVD process device which has a plasma generating means constituted by an ICP, and allow a condition for forming a film to be observed from the outside. ;CONSTITUTION: CDV process gas is introduced into a vacuum container 4 out of a process gas introducing port 6, and when high frequency electric power is applied to an antenna 3b provided in the vicinity of a dielectrics window 2, a high frequency electric field is induced within the vacuum container 4 by means of electromagnetic waves from the antenna 3b, and CVD process gas is formed into plasma, so that a film is formed over a specimen 9 by the accumulating of decomposition products. The antenna 3b, the dielectrics window 2 and a specimen stand 8 are set over the same shaft of the vacuum container 4 while being aligned in a plane direction, and the antenna 3b and the dielectrics window 2 are made larger in diameter than the specimen 6, so that the film is thereby uniformly formed. Besides, since the dielectrics window 2 is made of transparent material, a proceeding condition for forming the film can be observed from the outside, the film thickness can thereby be measured and controlled by a film thickness measuring means.;COPYRIGHT: (C)1995,JPO