首页> 外国专利> NONINVERTING BI-CMOS GATES WITH PROPAGATION DELAYS OF A SINGLE BI-CMOS INVERTER

NONINVERTING BI-CMOS GATES WITH PROPAGATION DELAYS OF A SINGLE BI-CMOS INVERTER

机译:具有单个BI-CMOS反相器传播延迟的同相BI-CMOS门

摘要

The present invention relates to a non-inverting bi-MOS logic gate whose propagation delay, such as a buffer or an AND gate, is approximately equal to the propagation delay through an inverter. One or more pass gates Q20-QA23 are used in the control path leading to the bipolar output transistor Q24, and one control gate of the MOS transistors constituting the pass gate is connected to the signal input terminal 20 of the bi-MOS gate. The control gate of the other MOS transistor is connected to the complement of the signal input terminal, the output terminal of the pass gate is connected to the base of the bipolar output transistor Q24, and the pass gate connected to the signal input terminal 20 is one. One or more pass gates may be used, and one or more pass gates connected to the signal input terminal 20 may be used. If a byte is used is characterized in that the output of the pass gate is configured with a connection (N21).
机译:非反相双MOS逻辑门本发明涉及一种非反相双MOS逻辑门,其诸如缓冲器或“与”门的传播延迟近似等于通过反相器的传播延迟。在通向双极输出晶体管Q24的控制路径中使用一个或多个通过门Q20-QA23,并且构成通过门的MOS晶体管中的一个控制门连接到双-MOS门的信号输入端子20。另一个MOS晶体管的控制栅极连接到信号输入端子的补码,传输门的输出端子连接到双极输出晶体管Q24的基极,传输门连接到信号输入端子20。一。可以使用一个或多个通过门,并且可以使用连接到信号输入端子20的一个或多个通过门。如果使用字节,则其特征在于,通过门的输出配置有连接(N21)。

著录项

  • 公开/公告号KR950701782A

    专利类型

  • 公开/公告日1995-04-28

    原文格式PDF

  • 申请/专利权人 성완 리;

    申请/专利号KR19940704120

  • 发明设计人 콩 키에유;

    申请日1994-11-16

  • 分类号H03K19/00;

  • 国家 KR

  • 入库时间 2022-08-22 04:10:47

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