Method for determining the emission wavelength of semiconductor lasers with Fabry-Perot cavity from electrical measurements.

摘要

The lasers being formed on the same semiconductor plate, the lambda1 emission wavelength of one of the lasers is optically determined. The lambda emission wavelength of each other laser is determined by electrical measurements on the current I injected into this laser and the voltage V between its terminals and with the formula lambda = DELTA + 1.24x (V - RxI) - 1 where R is the dynamic resistance of the laser for I greater than the threshold current of the laser. DELTA is determined with this formula applied to the laser whose emission wavelength is lambda1. Application to optical telecommunications.