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Method of determination of the emission wavelength of the cavity semiconductor lasers fabry perot - using electrical measurements.

机译:使用电学测量方法确定腔半导体激光器法线的发射波长的方法。

摘要

The lasers being formed on a same plate a semi - conductive, it determines the optically the emission wavelength lambda1 of one of the lasers. The emission wavelength lambda of each other laser is determined by the electrical measurements on the current i injected into the laser and the voltage v between its terminals, and with the formula λ = delta + v rxi 1,24x (-) - 1, where r is the dynamic resistance of the laser, for i greater than the threshold current of the laser. It determines delta with this formula is applied to the laser, the emission wavelength is lambda1. Application in optical telecommunications.
机译:激光器在同一块板上形成半导体,它从光学上确定其中一个激光器的发射波长λ1。每个其他激光器的发射波长λ取决于注入到激光器中的电流i及其端子之间的电压v的电测量值,公式为λ= delta + v rxi 1,24x(-)-1,其中r是激光器的动态电阻,其中i大于激光器的阈值电流。用该公式确定Δ适用于激光器,发射波长为λ1。在光通信中的应用。

著录项

  • 公开/公告号FR2708153B1

    专利类型

  • 公开/公告日1995-09-22

    原文格式PDF

  • 申请/专利权人 JOINDOT IRENE;

    申请/专利号FR19930008956

  • 发明设计人 JOINDOT IRENE;

    申请日1993-07-21

  • 分类号H01S3/13;H01S3/18;

  • 国家 FR

  • 入库时间 2022-08-22 04:07:02

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