A method of fabricating a VCSEL includes growing an epitaxially grown first mirror stack of a first conductivity type, epitaxially growing an active region on a first mirror stack, and depositing a second conductive type And then growing the first portion of the second mirror stack of the second mirror stack by epitaxial growth. [0052] Next, a dielectric layer is formed and patterned on the first portion of the second mirror stack to define the operating region, The remaining portion of the second mirror stack is grown epitaxially to form a completed second mirror stack. The portion of the second mirror stack lying on the dielectric layer is polycrystalline in composition and substantially confines the remaining portion of the second mirror stack to the operating region. Next, the polycrystalline layer may be removed to form an electrical contact.
展开▼
