Reactive ion etching equipment for semiconductor device manufacturing and reactive ion etching method using the same

摘要

The present invention relates to a reactive ion etching apparatus for manufacturing a semiconductor device and a reactive ion etching method using the same, and to prevent the difference between the critical dimension of the photoresist mask and the pattern formed due to the polymer generated by the strong plasma energy Reactive for semiconductor device manufacturing that can remove RIE lag phenomenon and improve device yield, characteristics and reliability by connecting low frequency and high frequency generators to upper and lower electrodes and supplying a predetermined gas to generate plasma. It relates to an ion etching equipment and a reactive ion etching method using the same.