首页> 外国专利> ITO Sintered Body, ITO Transparent Conductive Film and Method of Forming the Same (ITO SINTERED BODY, ITO TRANSPARENT CONDUCTIVE FILM AND METHOD OF FORMING THE FILM)

ITO Sintered Body, ITO Transparent Conductive Film and Method of Forming the Same (ITO SINTERED BODY, ITO TRANSPARENT CONDUCTIVE FILM AND METHOD OF FORMING THE FILM)

机译:ITO烧结体,ITO透明导电膜及其形成方法(ITO烧结体,ITO透明导电膜及其形成方法)

摘要

The SiO shown in FIG. 12-This2O3In the two-component system, SiO 2 corresponding to the region surrounded by the points A, B, C, D and E2And Bi2O3ITO sintered body containing a composition and an ITO transparent conductive film containing an additive of the same composition. The transparent conductive film may be formed by using the sintered body as a target and using an inert gas alone or an inert gas with O2And / or H2In a mixed gas of hydrogen and oxygen. The relative density of the sintered body is as high as 90% or more, and the transparent conductive film formed thereon has a high light transmittance,-4Cm 2 .
机译:图1中所示的SiO是不饱和的。 1 2 -此 2 O 3 在二组分体系中,SiO 2对应于被点A,B,C包围的区域,含有组成的D和E 2 和Bi 2 O 3 ITO烧结体和含有相同组成的添加剂的ITO透明导电膜。透明导电膜可以通过将烧结体作为靶并单独使用惰性气体或将O 2 和/或H 2 混合的惰性气体而形成。氢气和氧气的气体。烧结体的相对密度高达90%以上,并且在其上形成的透明导电膜具有高的透光率, -4 Cm <2>。

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