Magnetron sputtering method and apparatus of the substrate bias method

摘要

PURPOSE:To form a film with superior covering power to the substrate shape by controlling the voltage waveform of bias potential by means of specific conditions and also successively modifying the waveform in a film-forming process. CONSTITUTION:A sputtering device is equipped with a target 109, a sputter electrode 108 in which exciting coils are multiply disposed into an annular state to change the proportion of electric current to be sent to respective coils and also freely change the position of plasma formation, a vacuum tank 101, a sputter electric power source 111, an evacuating means 113, a sputtering gas-introducing means 112, a substrate 102 to be coated with film, and a substrate bias electric power source 120 applying bias potential to the substrate 102. At the time of forming a film by a bias sputtering method by the above constitution, the voltage waveform of bias potential is regulated so that the value obtained by dividing the length of time where the voltage takes the value on the negative side of the temporal average voltage value by the length of time where the voltage takes the value on the positive side of the temporal average value is below '1', and further, the ratio of times or waveform is successively modified in the course of a single film-forming process.