FORMATION OF POLYCRYSTALLINE SILICON THIN FILMS WITH LARGE GRAIN

摘要

A method for fabricating polysilicon thin film is described that can provide a big particle at a low temperature and make it possible to use cheap material. The method includes the steps of depositing amorphous silicon thin film on a substrate using PECVD or LPCVD and annealing the amorphous silicon thin film at the temperature of 300 deg. Cto 600 deg. C under the pressure of 10-9 to 103 Torr. The substrate is a glass substrate, silicon substrate, Si wafer or those which are covered with amorphous material. At step for depositing amorphous silicon thin film, SiH4 gas or the gas made by diluting the SiH4 gas with Ar, He, H2 or N2 are used. The particle made by the method has the size not less than 150 m. Thereby, it is possible to provide the polysilicon thin film having a big particle.