A method for manufacturing of a contact plug consisting of ptsi - platinum silicide

摘要

Prodn. of a silicide contact plug involves patterning an insulating film (62) on a substrate to form a via, depositing a silicon film over the entire structure to fill the via, back-etching the film to form a silicon contact plug, depositing a thin metal film over the entire structure, heat treating to form metal silicide and removing any unreacted metal to leave a silicide contact plug (67') in the via. The novelty is that the metal film is a platinum film. Also claimed is a semiconductor device with a platinum silicide contact plug.