首页>
外国专利>
Method of forming a Ta.sub.2 O.sub.5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta.sub. 2 O.sub.5 dielectric layer and amorphous diffusion barrier layer
Method of forming a Ta.sub.2 O.sub.5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta.sub. 2 O.sub.5 dielectric layer and amorphous diffusion barrier layer
展开▼
机译:形成具有非晶扩散阻挡层的Ta 2 O 5介电层的方法和形成具有Ta 2 O 5的电容器的方法。 2 O.sub.5介电层和非晶扩散阻挡层
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming a dielectric layer includes, a) chemical vapor depositing a dielectric layer of Ta.sub.2 O.sub.5 atop a substrate; and b) providing a predominately amorphous diffusion barrier layer over the Ta. sub.2 O.sub.5 dielectric layer. A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing a first electrically conductive capacitor plate over the node; c) chemical vapor depositing a capacitor dielectric layer of Ta.sub.2 O.sub.5 over the first electrically conductive capacitor plate; and d) providing a predominately amorphous diffusion barrier layer over the Ta.sub.2 O.sub.5 dielectric layer. A capacitor construction is also disclosed. The preferred amorphous diffusion barrier layer is electrically conductive and constitutes a metal organic chemical vapor deposited TiC.sub.x N.sub.y O.sub.z, where "x" is in the range of from 0. 01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0. Such is preferably deposited by utilizing a gaseous titanium organometallic precursor of the formula Ti(NR.sub.2).sub.4, where R is selected from the group consisting of H and a carbon containing radical, and utilizing deposition conditions of from 200 C. to 600 C. and from 0.1 to 100 Torr.
展开▼
机译:形成介电层的方法包括:a)化学气相沉积Ta 2 O 5的介电层在基板上; b)在Ta上提供主要为非晶的扩散阻挡层。 sub.2 O.sub.5介电层。一种形成电容器的方法,包括:a)提供要与电容器电连接的节点; b)在节点上方提供第一导电电容器极板; c)在第一导电电容器板上化学气相沉积Ta 2 O 5的电容器介电层; d)在Ta 2 O 5介电层上提供主要为非晶的扩散阻挡层。还公开了一种电容器构造。优选的无定形扩散阻挡层是导电的,并且构成金属有机化学气相沉积的TiC x N y O z,其中“ x”在0. 01至0.5的范围内,并且“ y”在0.99至0.5的范围内,并且“ z”在0至0.3的范围内,其中“ x”,“ y”和“ z”的总和约为1.0。最好通过利用式Ti(NR.sub.2).sub.4的气态钛有机金属前体,其中R选自H和含碳原子团,并利用200-200℃的沉积条件来沉积这种金属。 C.至600 C.和0.1至100 Torr。
展开▼