VISIBLE-LIGHT-EMITTING VERTICAL CAVITY SURFACE EMITTING LASER WITH GALLIUM PHOSPHIDE CONTACT LAYER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a visible-light-emitting vertical cavity surface emitting laser which comprises an easily doped contact layer and whose structural maintainability can be obtained. ;SOLUTION: A first distributed Bragg reflector stack 44 is arranged on the surface 43 of a semiconductor substrate 42. The stack 44 contains a plurality of alternating layers 45 made of substances whose refractive index is alternating, and the stack comprises a first dopant type. A first cladding region 48 is arranged on the stack 44, and an active region 54 is arranged on the first cladding region 48. The active region 54 comprises at least two barrier layers 56, 58 and a quantum well layer 60, a second cladding region 62 is arranged on the active region 54, and a second distributed Bragg reflector stack 68 is arranged on the cladding region 62. A contact region 62 is formed on the second distributed Bragg reflector stack 68. The contact region 72 contains a doped gallium phosphide substance.;COPYRIGHT: (C)1998,JPO