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A process for large-scale production of CdTe/CdS thin film solar cells, without the use of CdCl2

机译:不使用CdCl2的CdTe / CdS薄膜太阳能电池的大规模生产方法

摘要

A process for the large-scale production of CdTe/CdS thin film solar cells, saidfilms being deposited as a sequence on a transparent substrate, comprising thesteps of : depositing a film of a transparent conductive oxide (TCO) on said substrate;depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film;treating said CdTe film with a Chlorine-containing inert gas; depositing a back-contactfilm on said treated CdTe film. The Chlorine -containing inert gas is a Chlorofluorocarbon or a Hydrochlorof luorocarbon product and the treatment is carriedout in a vacuum chamber at an operating temperature of 380-4200C. The Chlorinereleased as a result of the thermal dissociation of the product reacts with solidCdTe present on the cell surface to produce TeCl2 and CdCl2 vapors. Any residualCdCl2 is removed from the cell surface by applying vacuum to the vacuum chamberwhile keeping the temperature at the operating value.
机译:大规模生产CdTe / CdS薄膜太阳能电池的方法,薄膜依次沉积在透明基板上,包括步骤:在所述衬底上沉积透明导电氧化物(TCO)的膜;在所述TCO膜上沉积CdS膜;在所述CdS膜上沉积CdTe膜;用含氯惰性气体处理所述CdTe膜。放置背接触所述处理过的CdTe薄膜上的薄膜。含氯惰性气体是氯气氟碳或氢氯氟烃产品并进行处理在工作温度为380-4200C的真空室中取出。氯气由于产品的热解离释放而与固体发生反应CdTe存在于细胞表面,产生TeCl2和CdCl2蒸气。任何残留通过向真空室施加真空从电池表面去除CdCl2同时将温度保持在工作值。

著录项

  • 公开/公告号AU2006213445B2

    专利类型

  • 公开/公告日2012-05-24

    原文格式PDF

  • 申请/专利权人 ARENDI SPA;

    申请/专利号AU20060213445

  • 申请日2006-02-02

  • 分类号H01L31/18;

  • 国家 AU

  • 入库时间 2022-08-21 17:19:58

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