首页> 外国专利> CMOS output buffer to reduce the oscillation of voltage negative feedback unit (NEGATIVE FEEDBACK TO REDUCE VOLTAGE OSCILLATION IN CMOS OUTPUT BUFFERS)

CMOS output buffer to reduce the oscillation of voltage negative feedback unit (NEGATIVE FEEDBACK TO REDUCE VOLTAGE OSCILLATION IN CMOS OUTPUT BUFFERS)

机译:CMOS输出缓冲器可减少电压负反馈单元的振荡(负反馈可减少CMOS输出缓冲器中的电压振荡)

摘要

the CMOS output buffer with voltage oscillation is a negative feedback means to the application. the buffer is full up transistor (P1), full down transistor (N1), a reference voltage generating circuit (44) and the second reference voltage generating circuit (54) and the first negative feedback circuit (48) and a second negative feedback circuit (58) structure. the first and the second negative feedback from the internal power supply potential and ground potential between the anode and the up / down - down drive transistor of the gate with the combination between each layer, the charge / discharge current change rate decreased.
机译:具有电压振荡的CMOS输出缓冲器是应用的负反馈手段。缓冲器为满载晶体管(P1),满载晶体管(N1),参考电压产生电路(44)和第二参考电压产生电路(54)以及第一负反馈电路(48)和第二负反馈电路(58)结构。第一和第二负反馈来自内部电源电势和阳极与栅极之间的上/下-下驱动晶体管之间的接地电位与各层之间的结合,充电/放电电流变化率降低。

著录项

  • 公开/公告号KR987000733A

    专利类型

  • 公开/公告日1998-03-30

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR19970704070

  • 发明设计人

    申请日1997-06-17

  • 分类号H03K19/003;

  • 国家 KR

  • 入库时间 2022-08-22 02:45:24

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