RE123-BASED SINGLE CRYSTAL, RE123-BASED SUPERCONDUCTIVE SINGLE CRYSTAL, SUPERCONDUCTIVE DEVICE SUBSTRATE AND PRODUCTION OF OXIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing RE123-based single crystal or the like, excellent in crystallinity, having definite single crystal composition before and after production of crystal, capable of continuously producing for a long time and simply controlling temperature. ;SOLUTION: This method for producing RE123-based single crystal comprises continuously pulling and growing RE123-based single crystal at solution surface temperature which is a temperature lower by 2-20°C than peritectic crystallization temperature from the surface of solution obtained by dissolving a solution raw material such as 1 or 2 or more RE elements (RE element is Y, La, Nd, Sm, Eu, Gd, Ho or Yb) as a solute into solvent melt of the formula nBaO-mCuO in which (n/m) ratio is (3/7) to (4/5). In this case, the solution surface temperature in melting of solution raw material is set so as to be same as solution surface temperature in pulling up and growing and oxygen partial pressure in melting is set to be lower than oxygen partial pressure in pulling up and growing.;COPYRIGHT: (C)1999,JPO