Nonvolatile memory device using field effect transistor with ferroelectric gate and manufacturing method thereof

摘要

Forming a CeO ₂ / SrBi ₂ Ta ₂ O ₉ double film on the semiconductor surface and attaching a platinum electrode on the SrBi ₂ Ta ₂ O ₉ film, a ferroelectric of the double film, and surrounding the triple layer of CeO ₂ / SrBi ₂ Ta ₂ O ₉ / Pt A field effect transistor (FET) memory element having a ferroelectric gate that does not require a capacitor is provided by using a gate formed by applying an anti-oxidation film to the gate of a field effect transistor.